| BACK |
| TiSi2 | ZrSi2 | TaSi2 | NbSi2 | CrSi2 | WSi2 | MoSi2 | |
| Silicon content[%] | 53.98 | 38.11 | 23.69 | 37.68 | 51.93 | 23.40 | 36.93 |
| Crystal structure | Orthorhombic | Orthorhombic | Hexagonal | Hexagonal | Hexagonal | Tetragonal | Tetragonal |
| Lattice periods,kx. a | 8.279 | 3.72 | 4.778 | 4.803 | 4.431 | 3.323 | 3.203 |
| b or c | b? 4.819 C 8.568 | b? 14.76 C 3.67 | 6.558 | 6.604 | 6.364 | 7.835 | 7.855 |
| c/a | 1.372 | 1.375 | 1.436 | 2.439 | 2.452 | ||
| Density[g/cm3] calculated |
4.043 | 4.86 | 9.1 | 5.66 | 4.978 | 9.857 | 6.24 |
| experimental | 4.02 | 4.88 | 8.83 | 5.45 | 4.91 | 9.25 | 〜6.23 |
| Microhardness 50g [kg/mm2] |
892 | 1063 | 1407 | 1050 | 1131 | 1074 | 1200 |
| Melting Point[℃] | 1500 | 1520 | 2200 | 1930 | 1475 | 2160 | 2020 |
| Heat of formation ΔH°(298）[Kcal/mol] |
-32.3±2 | -38.0 | -28.5±2.85 | -33±11.4 | -29.4 | -22.2 | -26.0 |
| Entropy S°(298) [Kcal/mol ℃] |
24.5±0.2 | ||||||
| Specific electrical resistance[μΩ cm] at 20℃ |
16.9±0.5 | 75.8±3.16 | 46.1±1.3 | 50.4±2.3 | 914±74.5 | 12.5±0.2 | 21.6±0.9 |
| Point of transition to superconductivity °K |
<1.20 | <1.02 | <1.20 | <1.20 | <1.20 | <1.20 | <1.20 |
(Reference) Hand book refractory compounds (metallurgiya in Moscow 1976 editions)
Metallic silicide powders make excellent heat-resistant and oxidation-resistant ceramics.MoSi2 materials are used for high-temprerature air heaters. Even at the high temperature of 1,700℃, oxidation resistance is achieved as the result of the formation of a protective film on the surface. This substance is also used as an electrical conduction additive for heat-resistant ceramics and shows great promise as a future ultra high-temperature material. The melting point of disilicides is relatively low, and can be used to produce oxidation-resistant surface coatings using a low pressure plasma spraying. Japan New Metals offers two types of particle products, coarse (-O products) for plasma and other applications, and fine (-F products) for sintered and particle dispersion compound materials. MoSi2,WSi2,TaSi2, and TiSi2 are currently drawing attention as PVD targets for semiconductor-related applications. |